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| Artikelnr.:
3523E-2266116 Fabrikantnr.:
IKW50N65EH5XKSA1 EAN/GTIN:
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| The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Meer informatie: | | Maximum Continuous Collector Current: | 80 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | 30V | Maximum Power Dissipation: | 275 W | Number of Transistors: | 1 | Configuration: | Single | Package Type: | PG-TO247 | Channel Type: | N | Pin Count: | 3 |
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| Andere zoekwoorden: Transistor, Transistors, 2266116, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW50N65EH5XKSA1 |
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