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| Artikelnr.:
3523E-2282814 Fabrikantnr.:
Si2387DS-T1-GE3 EAN/GTIN:
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| Channel Type = P
Maximum Continuous Drain Current = 3 A
Maximum Drain Source Voltage = 80 V
Series = TrenchFET
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 11 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 2.5V
Transistor Material = Si Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 3 A | Maximum Drain Source Voltage: | 80 V | Package Type: | SOT-23 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 11 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Number of Elements per Chip: | 2 | Transistor Material: | Si |
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| Andere zoekwoorden: 2282814, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, Si2387DST1GE3 |
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