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| Artikelnr.: 3523E-2282818 Fabrikantnr.: Si4056ADY-T1-GE3 EAN/GTIN: geen gegevens |
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| Channel Type = N Maximum Continuous Drain Current = 8.3 A Maximum Drain Source Voltage = 100 V Series = TrenchFET Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 0.0292 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Number of Elements per Chip = 2 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 8.3 A | Maximum Drain Source Voltage: | 100 V | Package Type: | SO-8 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0292 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Number of Elements per Chip: | 2 | Transistor Material: | Si |
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| Andere zoekwoorden: 2282818, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, Si4056ADYT1GE3 |
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