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| Artikelnr.:
3523E-2282823 Fabrikantnr.:
Si6423ADQ-T1-GE3 EAN/GTIN:
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| Channel Type = P
Maximum Continuous Drain Current = 12.5 A
Maximum Drain Source Voltage = 20 V
Series = TrenchFET
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 0.0098 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 1V
Number of Elements per Chip = 2 Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 12.5 A | Maximum Drain Source Voltage: | 20 V | Package Type: | TSSOP | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0098 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1V | Number of Elements per Chip: | 2 | Transistor Material: | Si |
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| Andere zoekwoorden: 2282823, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, Si6423ADQT1GE3 |
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