| |
|
| Artikelnr.: 3523E-2282880 Fabrikantnr.: SiHP6N80AE-GE3 EAN/GTIN: geen gegevens |
| |
|
| | |
| Channel Type = N Maximum Continuous Drain Current = 5 A Maximum Drain Source Voltage = 850 V Package Type = TO-220AB Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.95 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 5 A | Maximum Drain Source Voltage: | 850 V | Package Type: | TO-220AB | Series: | E Series | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.95 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
|
| | |
| | | |
| Andere zoekwoorden: 2282880, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiHP6N80AEGE3 |
| | |
| |