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| Artikelnr.:
3523E-2283052 Fabrikantnr.:
STO65N60DM6 EAN/GTIN:
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| The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Excellent switching performance thanks to the extra driving source pin Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 46 A | Maximum Drain Source Voltage: | 600 V | Package Type: | TO-LL Type A2 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.076 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.75V | Number of Elements per Chip: | 1 |
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