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| Artikelnr.: 3523E-2291830 Fabrikantnr.: IPC50N04S55R8ATMA1 EAN/GTIN: geen gegevens |
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| The Infineon n channel normal level power MOSFET used for automotive applications. It is 100 percent avalanche tested and AEC Q101 qualified.It is RoHS compliant It has 175°C operating temperature Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 50 A | Maximum Drain Source Voltage: | 40 V | Package Type: | SuperSO8 5 x 6 | Series: | OptiMOS™ 5 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0058 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.4V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2291830, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPC50N04S55R8ATMA1 |
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