| ![](/p.gif) |
![](/p.gif) |
| Artikelnr.: 3523E-2291845 Fabrikantnr.: IPG20N04S4L11AATMA1 EAN/GTIN: geen gegevens |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 20 A Maximum Drain Source Voltage = 40 V Series = IPG Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 0.0116 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.2V Number of Elements per Chip = 2 Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 20 A | Maximum Drain Source Voltage: | 40 V | Package Type: | SuperSO8 5 x 6 Dual | Series: | OptiMOS™ -T2 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0116 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.2V | Number of Elements per Chip: | 2 | Transistor Material: | Silicon |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Andere zoekwoorden: 2291845, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPG20N04S4L11AATMA1 |
| ![](/p.gif) | ![](/p.gif) |
| |