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| Artikelnr.:
3523E-2320387 Fabrikantnr.:
IMW65R039M1HXKSA1 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 46 A
Maximum Drain Source Voltage = 650 V
Series = CoolSiC
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 0.05 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5.7V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 46 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-247 | Series: | CoolSiC | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.05 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5.7V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2320387, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IMW65R039M1HXKSA1 |
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