|  |
| |
| Artikelnr.:
3523E-2320397 Fabrikantnr.:
IMW65R083M1HXKSA1 EAN/GTIN:
geen gegevens |
| |
|
| | |
| Channel Type = N
Maximum Continuous Drain Current = 24 A
Maximum Drain Source Voltage = 650 V
Series = CoolSiC
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 0.111 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5.7V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 24 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-247 | Series: | CoolSiC | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.111 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5.7V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
|
| | |
| | | |
| Andere zoekwoorden: 2320397, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IMW65R083M1HXKSA1 |
| | |
| |