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| Artikelnr.: 3523E-2320414 Fabrikantnr.: IMZA65R083M1HXKSA1 EAN/GTIN: geen gegevens |
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| Channel Type = N Maximum Continuous Drain Current = 26 A Maximum Drain Source Voltage = 650 V Series = CoolSiC Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance = 0.111 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5.7V Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 26 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-247-4 | Series: | CoolSiC | Mounting Type: | Through Hole | Pin Count: | 4 | Maximum Drain Source Resistance: | 0.111 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5.7V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2320414, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IMZA65R083M1HXKSA1 |
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