| ![](/p.gif) |
![](/p.gif) |
| Artikelnr.: 3523E-2326710 Fabrikantnr.: FP35R12N2T7BPSA1 EAN/GTIN: geen gegevens |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Maximum Continuous Collector Current = 35 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 7 Configuration = 3 Phase Mounting Type = Chassis Mount Channel Type = N Pin Count = 23 Transistor Configuration = 3 Phase Meer informatie: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 35 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 20 mW | Number of Transistors: | 7 | Configuration: | 3 Phase | Package Type: | Module | Mounting Type: | Chassis Mount | Channel Type: | N | Pin Count: | 23 | Transistor Configuration: | 3 Phase |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Andere zoekwoorden: Transistors, 2326710, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FP35R12N2T7BPSA1 |
| ![](/p.gif) | ![](/p.gif) |
| |