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| Artikelnr.:
3523E-2326717 Fabrikantnr.:
FP75R12N2T7B11BPSA1 EAN/GTIN:
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| Maximum Continuous Collector Current = 75 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 20 mW
Package Type = Module
Mounting Type = Chassis Mount
Channel Type = N
Pin Count = 31
Transistor Configuration = 3 Phase Meer informatie: | | Maximum Continuous Collector Current: | 75 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 20 mW | Number of Transistors: | 7 | Configuration: | 3 Phase | Package Type: | Module | Mounting Type: | Chassis Mount | Channel Type: | N | Pin Count: | 31 | Transistor Configuration: | 3 Phase |
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| Andere zoekwoorden: 2326717, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FP75R12N2T7B11BPSA1 |
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