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| Artikelnr.:
3523E-2445835 Fabrikantnr.:
FP50R12KE3BOSA1 EAN/GTIN:
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| Maximum Continuous Collector Current = 75 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 280 W Meer informatie: | | Maximum Continuous Collector Current: | 75 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 280 W | Number of Transistors: | 7 |
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| Andere zoekwoorden: 2445835, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FP50R12KE3BOSA1 |
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