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| Artikelnr.:
3523E-2533509 Fabrikantnr.:
BIDW50N65T EAN/GTIN:
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| Maximum Continuous Collector Current = 50 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 416 W
Package Type = TO-247 Meer informatie: | | Maximum Continuous Collector Current: | 50 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 416 W | Number of Transistors: | 1 | Configuration: | Single Diode | Package Type: | TO-247 |
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| Andere zoekwoorden: Transistors, 2533509, Semiconductors, Discrete Semiconductors, IGBTs, Bourns, BIDW50N65T |
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