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| Artikelnr.:
3523E-485391 Fabrikantnr.:
PBSS4160DS,115 EAN/GTIN:
5059043552095 |
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| Low Saturation Voltage NPN Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Meer informatie: | | Transistor Type: | NPN | Maximum DC Collector Current: | 1 A | Maximum Collector Emitter Voltage: | 60 V | Package Type: | TSOP | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 700 mW | Minimum DC Current Gain: | 250 | Transistor Configuration: | Isolated | Maximum Collector Base Voltage: | 80 V | Maximum Emitter Base Voltage: | 5 V | Maximum Operating Frequency: | 220 MHz | Pin Count: | 6 | Number of Elements per Chip: | 2 | Dimensions: | 1 x 3.1 x 1.7mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: SMD-transistor, SMD-transistors, Schakeltransistor, Schakeltransistors, Transistor, Transistors, dual transistor, 485391, Semiconductors, Discrete Semiconductors, Bipolar Transistors, Nexperia, PBSS4160DS,115 |
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