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| Artikelnr.:
3523E-6710908 Fabrikantnr.:
FQB4N80TM EAN/GTIN:
5059042848113 |
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| QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor ‘s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices. Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 3.9 A | Maximum Drain Source Voltage: | 800 V | Package Type: | D2PAK (TO-263) | Series: | QFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 3.6 Ω | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 3.13 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -30 V, +30 V | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 6710908, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FQB4N80TM |
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