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| Artikelnr.:
3523E-7965064 Fabrikantnr.:
GT50JR22 EAN/GTIN:
5059041140096 |
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| IGBT Discretes, Toshiba Meer informatie: | | Maximum Continuous Collector Current: | 50 A | Maximum Collector Emitter Voltage: | 600 V | Maximum Gate Emitter Voltage: | ±25V | Maximum Power Dissipation: | 230 W | Package Type: | TO-3P | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 | Switching Speed: | 1MHz | Transistor Configuration: | Single | Dimensions: | 15.5 x 4.5 x 20mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: Transistor, Transistors, 7965064, Semiconductors, Discrete Semiconductors, IGBTs, Toshiba, GT50JR22 |
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