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| Artikelnr.:
3523E-8051753 Fabrikantnr.:
NGB8207ABNT4G EAN/GTIN:
5059041441889 |
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| IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Meer informatie: | | Maximum Continuous Collector Current: | 50 A | Maximum Collector Emitter Voltage: | 365 V | Maximum Gate Emitter Voltage: | ±15V | Maximum Power Dissipation: | 165 W | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single | Dimensions: | 10.29 x 9.65 x 4.83mm | Maximum Operating Temperature: | +175 °C | Minimum Operating Temperature: | -55 °C |
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