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| Artikelnr.:
3523E-8184317 Fabrikantnr.:
V20120S-E3/4W EAN/GTIN:
5059040743250 |
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| TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor. The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds. Features. Patented Trench Structure Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters High power density and low forward voltage Meer informatie: | | Mounting Type: | Through Hole | Package Type: | TO-220AB | Maximum Continuous Forward Current: | 20A | Peak Reverse Repetitive Voltage: | 120V | Diode Configuration: | Single | Rectifier Type: | Schottky Rectifier | Diode Type: | Schottky | Pin Count: | 3 | Maximum Forward Voltage Drop: | 1.12V | Number of Elements per Chip: | 1 | Diode Technology: | Schottky Barrier | Peak Non-Repetitive Forward Surge Current: | 200A |
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| Andere zoekwoorden: Schottkydiode, 8184317, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, Vishay, V20120SE34W |
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