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| Artikelnr.:
3523E-8269412 Fabrikantnr.:
BSS316NH6327XTSA1 EAN/GTIN:
5059043018294 |
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| Infineon OptiMOS™2 Power MOSFET Family. Infineon ‘s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types. Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 1.4 A | Maximum Drain Source Voltage: | 30 V | Package Type: | SOT-23 | Series: | OptiMOS 2 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 280 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 500 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 2.9mm |
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| Andere zoekwoorden: 8269412, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSS316NH6327XTSA1 |
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