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| Artikelnr.:
3523E-8576883 Fabrikantnr.:
IPP120P04P4L03AKSA1 EAN/GTIN:
5059043529691 |
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| Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 120 A | Maximum Drain Source Voltage: | 40 V | Package Type: | TO-220 | Series: | OptiMOS P | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 5.2 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 136 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -16 V, +16 V | Length: | 10mm |
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| Andere zoekwoorden: 8576883, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPP120P04P4L03AKSA1 |
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