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| Artikelnr.:
3523E-9064306 Fabrikantnr.:
BSB028N06NN3GXUMA1 EAN/GTIN:
5059043837390 |
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| Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 90 A | Maximum Drain Source Voltage: | 60 V | Package Type: | MG-WDSON-2 | Series: | OptiMOS 3 | Mounting Type: | Surface Mount | Pin Count: | 7 | Maximum Drain Source Resistance: | 2.8 mΩ | Channel Mode: | Enhancement | Maximum Power Dissipation: | 78 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 6.35mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 9064306, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSB028N06NN3GXUMA1 |
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