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| Artikelnr.:
3523E-9114997 Fabrikantnr.:
IPD30N10S3L34ATMA1 EAN/GTIN:
5059043776460 |
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| Infineon OptiMOS™T Power MOSFETs. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 30 A | Maximum Drain Source Voltage: | 100 V | Package Type: | DPAK (TO-252) | Series: | OptiMOS™-T | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 42 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.4V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 57 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 6.5mm |
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| Andere zoekwoorden: 9114997, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD30N10S3L34ATMA1 |
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