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| Artikelnr.:
3523E-9190275 Fabrikantnr.:
SI2325DS-T1-E3 EAN/GTIN:
5059040650510 |
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| P-Channel MOSFET, 100V to 400V, Vishay Semiconductor Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 530 mA | Maximum Drain Source Voltage: | 150 V | Package Type: | SOT-23 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 1.2 Ω | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 2.5V | Maximum Power Dissipation: | 750 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 3.04mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 9190275, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI2325DST1E3 |
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