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| Artikelnr.:
3523E-9194208 Fabrikantnr.:
SI2319CDS-T1-GE3 EAN/GTIN:
5059040667686 |
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| P-Channel MOSFET, 30V to 80V, Vishay Semiconductor Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 4.4 A | Maximum Drain Source Voltage: | 40 V | Package Type: | SOT-23 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 108 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 2.5 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 3.04mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 9194208, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI2319CDST1GE3 |
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