VISHAY SIHB23N60E-GE3 MOSFET, N CH, 600V, 23A, TO-263-3

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.132 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 23 A Operating Temperature Max 150 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 600 V Power Dissipation 227 W Qualification - Gate Source Threshold Voltage Max - SVHC Lead (19-Jan-2021)