VISHAY SIHD12N50E-GE3 MOSFET, N-CH, 500V, 10.5A, TO-252-3

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.33 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 10.5 A Operating Temperature Max 150 °C Transistor Case Style TO-252 (DPAK) Drain Source Voltage Vds 500 V Power Dissipation 114 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021)