VISHAY SI4459BDY-T1-GE3 MOSFET, P-CH, -30V, -27.8A, SOIC

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0041 ohm Product Range TrenchFET Gen IV MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 27.8 A Operating Temperature Max 150 °C Transistor Case Style SOIC Drain Source Voltage Vds 30 V Power Dissipation 5.6 W Qualification - Gate Source Threshold Voltage Max 2.2 V SVHC Lead (10-Jun-2022)