ONSEMI FDC658P MOSFET, P-CH, -30V, -4A, 1.6W, SUPERSOT

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.041 ohm Product Range PowerTrench MSL MSL 1 - Unlimited No. of Pins 6 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 4 A Operating Temperature Max 150 °C Transistor Case Style SuperSOT Drain Source Voltage Vds 30 V Power Dissipation 1.6 W Qualification - Gate Source Threshold Voltage Max 1.7 V SVHC No SVHC (15-Jan-2018)