VISHAY SIHB180N60E-GE3 MOSFET, N-CH, 19A, 600V, TO-263

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.155 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 19 A Operating Temperature Max 50 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 600 V Power Dissipation 156 W Qualification - Gate Source Threshold Voltage Max 5 V SVHC Lead (19-Jan-2021)