VISHAY SI3127DV-T1-GE3 MOSFET, P-CH, 60V, 5.1A, 150DEG C, 4.2W

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.074 ohm Product Range TrenchFET No. of Pins 6 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 5.1 A Operating Temperature Max 150 °C Transistor Case Style TSOP Drain Source Voltage Vds 60 V Power Dissipation 4.2 W Qualification - Gate Source Threshold Voltage Max 3 V SVHC No SVHC (10-Jun-2022)