VISHAY SIHD5N80AE-GE3 MOSFET, N-CH, 800V, 4.4A, TO-252

Rds(on) Test Voltage 10 V Drain Source On State Resistance 1.17 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 4.4 A Operating Temperature Max 150 °C Transistor Case Style TO-252 (DPAK) Drain Source Voltage Vds 800 V Power Dissipation 62.5 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021)