ROHM R6507END3TL1 MOSFET, N-CH, 650V, 7A, TO-252

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.605 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 7 A Operating Temperature Max 150 °C Transistor Case Style TO-252 (DPAK) Drain Source Voltage Vds 650 V Power Dissipation 78 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (17-Jan-2023)