VISHAY SI4126DY-T1-GE3 MOSFET, N-CH, 30V, 39A, SOIC

Transistor Case Style SOIC Drain Source Voltage Vds 30 V Power Dissipation 7.8 W Qualification - Gate Source Threshold Voltage Max 1 V SVHC Lead (10-Jun-2022) Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0022 ohm Product Range Trench No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 39 A Operating Temperature Max 150 °C