VISHAY SI4160DY-T1-GE3 MOSFET, N-CH, 30V, 25.4A, SOIC

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.004 ohm Product Range Trench MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 25.4 A Operating Temperature Max 150 °C Transistor Case Style SOIC Drain Source Voltage Vds 30 V Power Dissipation 5.7 W Qualification - Gate Source Threshold Voltage Max 1 V SVHC Lead (10-Jun-2022)