VISHAY SI4464DY-T1-GE3 MOSFET, N-CH, 200V, 1.7A, SOIC

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.195 ohm Product Range TrenchFET No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 1.7 A Operating Temperature Max 150 °C Transistor Case Style SOIC Drain Source Voltage Vds 200 V Power Dissipation 1.5 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC No SVHC (10-Jun-2022)