VISHAY SI5513CDC-T1-GE3 MOSFET, DUAL, COMPLEMENT, 20V/4A/CHIPFET

Drain Source Voltage Vds N Channel 20 V Continuous Drain Current Id P Channel 4 A Product Range Trench Series No. of Pins 8 Pins Drain Source Voltage Vds P Channel 20 V Continuous Drain Current Id N Channel 4 A Drain Source On State Resistance N Channel 0.045 ohm Channel Type Complementary N and P Channel Drain Source On State Resistance P Channel 0.045 ohm Power Dissipation N Channel 3.1 W Power Dissipation P Channel 3.1 W Operating Temperature Max 150 °C Transistor Case Style ChipFET Qualification - SVHC No SVHC (10-Jun-2022)