STMICROELECTRONICS SCTW60N120G2 MOSFET, SIC, 1.2KV, 60A, HIP247

Rds(on) Test Voltage 18 V Drain Source On State Resistance 0.035 ohm Product Range - No. of Pins 3 Pins MOSFET Module Configuration Single Channel Type N Channel Continuous Drain Current Id 60 A Operating Temperature Max 200 °C Transistor Case Style HiP247 Drain Source Voltage Vds 1.2 kV Power Dissipation 389 W Gate Source Threshold Voltage Max 3 V SVHC No SVHC (08-Jul-2021)