VISHAY SI4190BDY-T1-GE3 MOSFET, N-CH, 100V, 17A, SO-8

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0077 ohm Product Range TrenchFET Gen IV Series No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 17 A Operating Temperature Max 150 °C Transistor Case Style SO-8 Drain Source Voltage Vds 100 V Power Dissipation 8.4 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC No SVHC (17-Jan-2023)