FRAM Memory (149 artikelen)

FRAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Part...

FRAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Part...

128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability f...

Memory Size = 128kbit Organisation = 16 kB x 8 Interface Type = Serial-I2C Data Bus Width = 8bit Maximum Random Access Time = 450ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 D...

FRAM Memory

FRAM Memory

Memory Size = 128kbit Organisation = 16K x 8 Interface Type = Serial-SPI Data Bus Width = 8bit Package Type = SOIC Pin Count = 8

FRAM Memory

FRAM Memory

Memory Size = 16Mbit Organisation = 128K x 8 Interface Type = Serial-I2C Data Bus Width = 8bit Package Type = SOIC Pin Count = 8

FRAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Part...

FRAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Part...

16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention (See Data Retention and Endurance on page 10)...

FRAM Memory

FRAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Part...