Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon. Motor Control MOSFET. Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control ap...
Rds(on) Test Voltage 18 V Drain Source On State Resistance 0.083 ohm Product Range CoolSiC M1 Trench Series MSL - No. of Pins 7 Pins MOSFET Module Configuration Single Channel Type N Channel Operat...
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0036 ohm Product Range OptiMOS 5 MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Opera...
P-Channel Power MOSFET 30V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any...
MOSFET ; IGBT Gate Drivers, Half-Bridge, Infineon. Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in half bridge configurations.
Rds(on) Test Voltage 18 V Drain Source On State Resistance 0.26 ohm Product Range CoolSiC M1 Trench Series MSL - No. of Pins 7 Pins MOSFET Module Configuration Single Channel Type N Channel Operati...
N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address ...
Rds(on) Test Voltage 18 V Drain Source On State Resistance 0.0529 ohm Product Range EasyPACK CoolsiC Series No. of Pins 23 Pins MOSFET Module Configuration SixPack Channel Type Six N Channel Operat...
N-Channel Power MOSFET 150V to 600V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address a...
Rds(on) Test Voltage 15 V Drain Source On State Resistance 0.045 ohm Product Range CoolSiC No. of Pins 3 Pins MOSFET Module Configuration Single Channel Type N Channel Operating Temperature Max 175...
MOSFET ; IGBT Gate Drivers, High and Low Side, Infineon. Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in high-side and low-side configurations.