Channel Type = N Maximum Continuous Drain Current = 127 A Maximum Drain Source Voltage = 100 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Number of Elements per Chip = 1
Channel Type = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 75 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Number of Elements per Chip = 1
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating ...
The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability
Channel Type = N Maximum Continuous Drain Current = 1.6 A Maximum Drain Source Voltage = 100 V Package Type = PQFN 5mm x 6mm Mounting Type = Through Hole
Channel Type = N Maximum Continuous Drain Current = 129 A Maximum Drain Source Voltage = 135 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Elemen...