Channel Type = N Maximum Continuous Drain Current = 75 A Maximum Drain Source Voltage = 60 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Elements...
The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatin...
Channel Type = N Maximum Continuous Drain Current = 75 A Maximum Drain Source Voltage = 75 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Elements...
The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mount...
Channel Type = N Maximum Continuous Drain Current = 92 A Maximum Drain Source Voltage = 30 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Elements...
This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized ...
Channel Type = N Maximum Continuous Drain Current = 35 A Maximum Drain Source Voltage = 150 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Element...
The Infineon single p channel HEXFET power MOSFET in D2-Pak package. It has fast switching and fully avalanche rated. It is lead free and has low on resistance.It is RoHS compliant and AEC qualifie...
The Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating...