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| Artikelnr.:
3523E-1646971 Fabrikantnr.:
STPSC8065D EAN/GTIN:
5059042163025 |
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| The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phasesNo or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Operating Tj from -40 °C to 175 °C Meer informatie: | | Mounting Type: | Through Hole | Package Type: | TO-220AC | Maximum Continuous Forward Current: | 8A | Peak Reverse Repetitive Voltage: | 650V | Diode Configuration: | Single | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 2 | Maximum Forward Voltage Drop: | 1.65V | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky | Peak Non-Repetitive Forward Surge Current: | 200A |
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