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| Artikelnr.:
3523E-1712408 Fabrikantnr.:
SSM6N35FE EAN/GTIN:
5059041787864 |
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| 1.2-V drive N-ch 2-in-1 Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) Ron = 8 Ω (max) (@VGS = 1.5 V) Ron = 4 Ω (max) (@VGS = 2.5 V) Ron = 3 Ω (max) (@VGS = 4.0 V) Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 180 mA | Maximum Drain Source Voltage: | 20 V | Package Type: | SOT-563 | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 20 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1V | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 150 mW | Maximum Gate Source Voltage: | ±10 V | Length: | 1.2mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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| Andere zoekwoorden: 1712408, Semiconductors, Discrete Semiconductors, MOSFETs, Toshiba, SSM6N35FE |
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