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| Artikelnr.:
3523E-1857972 Fabrikantnr.:
AFGB40T65SQDN EAN/GTIN:
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| Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.VCE(sat) = 1.6 V (typ.) @ IC = 40 A Low VF soft recovery co-packaged diode For automotive Low conduction loss Low noise and conduction loss Applications Automotive On Board Charge Automotive DC/DC converter for HEV End Products EV/PHEV Meer informatie: | | Maximum Continuous Collector Current: | 80 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 238 W | Number of Transistors: | 1 | Package Type: | D2PAK | Mounting Type: | Surface Mount | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single | Dimensions: | 10.67 x 9.65 x 4.58mm | Automotive Standard: | AEC-Q101 | Energy Rating: | 22.3mJ | Gate Capacitance: | 2495pF | Maximum Operating Temperature: | +175 °C |
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