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| Artikelnr.:
3523E-1958769 Fabrikantnr.:
NXH100B120H3Q0PTG EAN/GTIN:
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| Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 186 W
Configuration = Dual
Mounting Type = Surface Mount
Channel Type = N
Pin Count = 22
Transistor Configuration = Dual
Dimensions = 66.2 x 32.8 x 11.9mm
Maximum Operating Temperature = +150 °C Meer informatie: | | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 186 W | Configuration: | Dual | Package Type: | Q0BOOST | Mounting Type: | Surface Mount | Channel Type: | N | Pin Count: | 22 | Transistor Configuration: | Dual | Dimensions: | 66.2 x 32.8 x 11.9mm | Maximum Operating Temperature: | +150 °C | Minimum Operating Temperature: | -40 °C | Width: | 32.8mm |
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| Andere zoekwoorden: Transistors, 1958769, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, NXH100B120H3Q0PTG |
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