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| Artikelnr.:
3523E-2194233 Fabrikantnr.:
STPSC10H12G2Y-TR EAN/GTIN:
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| The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.AEC-Q101 qualified No or negligible reverse recovery Switching behaviour independent of temperature Robust high voltage periphery PPAP capable Operating Tj from -40 °C to 175 °C Low VF Meer informatie: | | Mounting Type: | Surface Mount | Package Type: | D2PAK HV | Maximum Continuous Forward Current: | 10A | Peak Reverse Repetitive Voltage: | 1200V | Diode Configuration: | Single | Pin Count: | 2 | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: Gelijkrichters, Gelijkrichterdiode, Gelijkrichterdiodes, SMD-diode, SMD-diodes, Schottky-diode, Schottkydiode, 2194233, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, STMicroelectronics, STPSC10H12G2YTR |
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