Infineon 2ED2182S06FXUMA1 MOSFET Gate Driver, 2.5 A, 20V 8-Pin, DSO

The Infineon 2ED2182S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.Floating channel designed for bootstrap operation Operating voltages (VS node) upto + 650 V Maximum bootstrap voltage (VB node) of + 675 V Integrated ultra-fast, low resistance bootstrap diode